Catalog Devices¶

Status: shipped — header-only data classes + six reference parts. Full Circuit-variant integration (catalog devices on the MNA stamp surface) is the natural follow-up.

The catalog tier upgrades Pulsim's nonlinear device library from "good enough for first-cut design" to "match the vendor datasheet within the published tolerance band". Three device classes plus a YAML loader plus six reference parts ship today:

Device class	Header	Use case
`MosfetCatalog`	`catalog/mosfet_catalog.hpp`	Si super-junction, SiC, GaN — nonlinear `i_d(V_ds, V_gs, T_j)`, vendor-published `Coss/Ciss/Crss(V_ds)`, `Eon/Eoff(I_c, V_ds)` switching tables.
`IgbtCatalog`	`catalog/igbt_catalog.hpp`	Si IGBTs with `V_ce_sat(I_c, T_j)` lookup, exponential tail-current decay, switching + recovery energy tables.
`DiodeCatalog`	`catalog/diode_catalog.hpp`	Standalone Si fast-recovery, SiC Schottky, body diodes — `V_f(I_f, T_j)` and `Q_rr(I_f, di/dt)` lookups with reverse-recovery shape factor.

Plus the data plumbing:

Helper	Header	Use case
`LookupTable2D`	`catalog/lookup_table_2d.hpp`	Bilinear-interp 2D LUT for any `f(x, y)` parameter.
Catalog YAML loader	`catalog/device_catalog_yaml.hpp`	`parse_device_catalog_yaml` and `load_device_catalog_file` return `std::variant<MosfetCatalogParams, IgbtCatalogParams, DiodeCatalogParams>` so the call site dispatches by class.

Like add-magnetic-core-models, the layer is header-only — no linker dependency on pulsim.lib. The Circuit-side integration (registering MosfetCatalog next to the existing Level-1 MOSFET in the DeviceVariant) is the next change.

TL;DR¶

#include "pulsim/v1/catalog/device_catalog_yaml.hpp"
#include "pulsim/v1/catalog/mosfet_catalog.hpp"

using namespace pulsim::v1::catalog;

const auto params = load_device_catalog_file(
    "devices/catalog/Wolfspeed/C3M0065090J.yaml");
MosfetCatalog Q1{std::get<MosfetCatalogParams>(params)};

// Operating-point queries
const Real R_on    = Q1.params().R_ds_on(85.0);                 // T_j = 85 °C
const Real Coss    = Q1.C_oss(400.0);                            // V_ds = 400 V
const Real I_d     = Q1.drain_current(/*V_ds*/0.5, /*V_gs*/15, /*T_j*/85);
const Real Eon_uJ  = 1e6 * Q1.switching_energy_on(20.0, 600.0);  // 20A @ 600V

Six reference parts (gate G.4: ≥ 3 of 6 importable — all 6 ship)¶

Vendor	Part	Class	Notes
Infineon	`IPP60R190P7`	`mosfet`	600 V Si CoolMOS P7, 190 mΩ, TO-220
Wolfspeed	`C3M0065090J`	`mosfet`	900 V SiC, 65 mΩ, TO-247
GaN Systems	`GS66508T`	`mosfet`	650 V GaN HEMT, 50 mΩ, PDFN
Infineon	`IKW40N120T2`	`igbt`	1200 V Si TrenchStop2, 40 A, fast-tail
Wolfspeed	`C4D20120D`	`diode`	1200 V SiC Schottky, 20 A
Vishay	`VS-30CTH02`	`diode`	200 V Si fast-recovery, 30 A

YAML files live under devices/catalog/<vendor>/<part>.yaml. The schema is:

class: mosfet           # or 'igbt' or 'diode'
vendor: <string>
part: <string>

# MOSFET-specific:
V_th_25c: 3.0
V_th_temp_coef: -6e-3
R_ds_on_25c: 0.190
R_ds_on_temp_coef: 6e-3
V_ds_max: 600

# 1D capacitance tables (any 2-key map per point — e.g. V/C, x/y)
Coss:
  - { V: 0,   C: 4.6e-9 }
  - { V: 50,  C: 200e-12 }
  ...

# 2D switching-energy tables
Eon:
  x: [5, 10, 20]      # I_d axis (A)
  y: [200, 400]       # V_ds axis (V)
  values: [25e-6, 50e-6, 100e-6,
           50e-6, 100e-6, 200e-6]

Strict failure modes: missing class:, unknown class:, fewer than 2 axis points in any LUT, non-monotone axes — all surfaced as std::invalid_argument.

What each model captures¶

`MosfetCatalog`¶

I_d(V_ds, V_gs, T_j) = clamp(min(V_ds / R_on(T_j),  (V_gs - V_th(T_j)) / R_on(T_j)),
                             0,  ∞)
R_on(T_j) = R_ds_on_25c · (1 + R_ds_on_temp_coef · (T_j - 25))
V_th(T_j) = V_th_25c    + V_th_temp_coef    · (T_j - 25)

Plus capacitance and switching-energy lookups — used by the loss-accounting layer on every commutation event. Off-state leakage floors at I_dss_25c (typically 1 nA – 100 nA from the datasheet).

`IgbtCatalog`¶

V_ce_sat(I_c, T_j) from the datasheet's saturation-voltage figure. tail_current(I_c0, t_after_off) = I_c0 · I_tail_fraction · exp(-t / τ_tail) — used to integrate tail-current loss over the post-turn-off window. Switching energies are 2D Eon/Eoff/Erec tables vs (I_c, V_ce).

`DiodeCatalog`¶

V_f(I_f, T_j) for both polarities of temperature coefficient: Si fast-recovery has dV/dT < 0 (V drops as T rises); SiC Schottky has dV/dT > 0 (V rises as T rises). Q_rr(I_f, di/dt) carries the reverse-recovery charge — Si fast-recovery has substantial Q_rr; SiC Schottky has only junction-capacitance-driven Q_rr that's nearly flat.

The reverse-recovery shape factor s_rec controls how the recovery current trajectory looks: s_rec ≈ 0.4 for hard-recovery Si, s_rec ≈ 1.5 for soft-recovery / Schottky. The estimated recovery energy is Q_rr · V_r · (1 - s_rec / (1 + s_rec)).

Validation¶

Three end-to-end gates:

Gate	Test	Result
G.1 Switching loss tracks datasheet	`test_catalog_phase8_validation::Phase 8 G.1`	Wolfspeed C3M0065090J: Eon scales linearly with `I_c` and `V_ds` to within 10 % across the catalog table
G.2 Conduction loss within 5 % over 25–125 °C	`Phase 8 G.2`	Infineon IPP60R190P7: `I² · R_ds_on(T_j)` matches the catalog's `R_on(T_j)` model within 5 % at 25 / 75 / 125 °C
G.3 Q_rr behavior	`Phase 8 G.3`	Si fast-recovery Q_rr rises ≥ 20 % between 1e8 and 1e9 A/s; SiC Schottky stays under 100 nC and within 1.5× across the same range
G.4 ≥ 3 of 6 cores load	`test_catalog_phase7_yaml_loader::Phase 7`	All 6 of 6 reference YAMLs parse cleanly + drive their device class end-to-end
G.5 Catalog browser docs	This page	Static reference — interactive browser is the natural follow-up once the Circuit-variant integration lands

Limitations / follow-ups¶

Circuit::DeviceVariant integration: today the catalog devices are math objects. Wiring MosfetCatalog / IgbtCatalog / DiodeCatalog into Circuit::DeviceVariant so a YAML netlist can declare type: mosfet_catalog, model: Wolfspeed/C3M0065090J is the next change. The math layer is final; the integration is mostly parser/dispatch plumbing.
PDF / SPICE importers (pulsim.import_datasheet(pdf), import_spice_lib(...), import_plecs_xml(...)): deferred. The YAML manifest path delivered today already covers the catalog use case without OCR / vendor-library risk. PDF importer follows when a user actually needs to onboard a part not in the shipped library.
LTspice / NgSpice parity tests: Phase 8 here uses analytical references because LTspice / NgSpice are not in CI. Vendor-model parity (within 10 % switching loss, 5 % conduction loss) is a bench-test that tracks alongside the integration change.
Catalog browser web page: tracked — the docs page above is the text reference, an interactive HTML browser with vendor parity waveforms is the natural notebook-tier deliverable.

Catalog Devices¶

TL;DR¶

Six reference parts (gate G.4: ≥ 3 of 6 importable — all 6 ship)¶

What each model captures¶

MosfetCatalog¶

IgbtCatalog¶

DiodeCatalog¶

Validation¶

Limitations / follow-ups¶

See also¶

`MosfetCatalog`¶

`IgbtCatalog`¶

`DiodeCatalog`¶